Towards precise LET measurements based on energy deposition of therapeutic ions in Timepix3 detectors
Objective. There is an increasing interest in calculating and measuring linear energy transfer (LET) spectra in particle therapy in order to assess their impact in biological terms. As such, the accuracy of the particle fluence energy spectra becomes paramount. This study focuses on quantifying ener...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
18 June 2024
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| In: |
Physics in medicine and biology
Year: 2024, Jahrgang: 69, Heft: 12, Pages: 1-17 |
| ISSN: | 1361-6560 |
| DOI: | 10.1088/1361-6560/ad5267 |
| Online-Zugang: | Verlag, kostenfrei, Volltext: https://doi.org/10.1088/1361-6560/ad5267 Verlag, kostenfrei, Volltext: https://dx.doi.org/10.1088/1361-6560/ad5267 
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| Verfasserangaben: | Renato Félix-Bautista, Yasmin Hamad, Tomás Yáñez-González, Pamela Ochoa-Parra, Carlos Granja, Mária Martišíková, Andrea Mairani and Tim Gehrke |
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| 520 | |a Objective. There is an increasing interest in calculating and measuring linear energy transfer (LET) spectra in particle therapy in order to assess their impact in biological terms. As such, the accuracy of the particle fluence energy spectra becomes paramount. This study focuses on quantifying energy depositions of distinct proton, helium, carbon, and oxygen ion beams using a silicon pixel detector developed at CERN to determine LET spectra in silicon. Approach. While detection systems have been investigated in this pursuit, the scarcity of detectors capable of providing per-ion data with high spatial and temporal resolution remains an issue. This gap is where silicon pixel detector technology steps in, enabling online tracking of single-ion energy deposition. The used detector consisted of a 300 µm thick silicon sensor operated in partial depletion. Main results. During post-processing, artifacts in the acquired signals were identified and methods for their corrections were developed. Subsequently, a correlation between measured and Monte Carlo-based simulated energy deposition distributions was performed, relying on a two-step recalibration approach based on linear and saturating exponential models. Despite the observed saturation effects, deviations were confined below 7% across the entire investigated range of track-averaged LET values in silicon from 0.77 keV µm−1 to 93.16 keV µm−1. Significance. Simulated and measured mean energy depositions were found to be aligned within 7%, after applying artifact corrections. This extends the range of accessible LET spectra in silicon to clinically relevant values and validates the accuracy and reliability of the measurements. These findings pave the way towards LET-based dosimetry through an approach to translate these measurements to LET spectra in water. This will be addressed in a future study, extending functionality of treatment planning systems into clinical routine, with the potential of providing ion-beam therapy of utmost precision to cancer patients. | ||
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