Electrically-switchable gain in optically pumped CsPbBr3 lasers with low threshold at nanosecond pumping
Metal halide perovskites hold promise for nonepitaxial laser diodes, yet, continuous-wave (CW) optically pumped (photonic) lasing in CsPbBr3 remains elusive despite its superior thermal- and photo-stability among the perovskite family. This work reports on CsPbBr3 vertical cavity surface emitting la...
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| Hauptverfasser: | , , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
April 2, 2025
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| In: |
Small
Year: 2025, Jahrgang: 21, Heft: 13, Pages: 1-8 |
| ISSN: | 1613-6829 |
| DOI: | 10.1002/smll.202411935 |
| Online-Zugang: | Verlag, kostenfrei, Volltext: https://doi.org/10.1002/smll.202411935 Verlag, kostenfrei, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.202411935 |
| Verfasserangaben: | Yang Li, Shangpu Liu, Thomas Feeney, Julie Roger, Mohammad Gholipoor, Hang Hu, Dewei Zhao, Ian Howard, Felix Deschler, Uli Lemmer, and Ulrich W. Paetzold |
MARC
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| 246 | 3 | 3 | |a Electrically-switchable gain in optically pumped CsPbBr 3 lasers with low threshold at nanosecond pumping |
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| 520 | |a Metal halide perovskites hold promise for nonepitaxial laser diodes, yet, continuous-wave (CW) optically pumped (photonic) lasing in CsPbBr3 remains elusive despite its superior thermal- and photo-stability among the perovskite family. This work reports on CsPbBr3 vertical cavity surface emitting lasers with low lasing thresholds (1.3 µJ cm− 2) at nanosecond pumping and remarkable lasing stability. Furthermore, the electrically switchable gain is achieved in CsPbBr3 electrically assisted optically pumped laser (EAOPL) devices by leveraging ion migration. Applying a small positive DC voltage to the EAOPL device significantly reduces the lasing threshold under nanosecond laser excitation and enhances the cavity mode intensity at CW laser excitation. These findings present a novel strategy, combining a small DC voltage with an electrical pulse, for exploring electrical injection lasing in CsPbBr3 perovskites. | ||
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| 650 | 4 | |a electrically injection lasing | |
| 650 | 4 | |a ion migration | |
| 650 | 4 | |a perovskite | |
| 650 | 4 | |a VCSEL | |
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| 700 | 1 | |a Zhao, Dewei |e VerfasserIn |4 aut | |
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