What makes thickness-tolerant organic solar cells?
Relatively thick-film organic photovoltaics (OPVs) are desirable to spark commercialization through mass-printing methods. Thickness-resilient donor:acceptor blends are, however, scarce and not fully understood. The interplay between electronic, optical, and microstructural properties of the photoac...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2025
|
| In: |
Advanced energy materials
Year: 2025, Pages: ? |
| ISSN: | 1614-6840 |
| DOI: | 10.1002/aenm.202405735 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1002/aenm.202405735 Verlag, lizenzpflichtig, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/aenm.202405735 
|
| Verfasserangaben: | Xabier Rodríguez-Martínez, Constantin Tormann, Marta Sanz-Lleó, Bernhard Dörling, Martí Gibert-Roca, Albert Harillo-Baños, Alfonsina Abat Amelenan Torimtubun, Enrique Pascual-San-José, José P. Jurado, Laura López-Mir, Martijn Kemerink and Mariano Campoy-Quiles |
| Zusammenfassung: | Relatively thick-film organic photovoltaics (OPVs) are desirable to spark commercialization through mass-printing methods. Thickness-resilient donor:acceptor blends are, however, scarce and not fully understood. The interplay between electronic, optical, and microstructural properties of the photoactive layer (PAL) generates a multi-parametric space where rationalization is far from trivial. In this work, high-throughput experimentation, simulations, and machine learning (ML) methods are leveraged to provide material and device insights toward thickness-resilient OPVs. From a database of 720 inverted devices and 20 different donor:acceptor blends, two main blend families are identified in terms of their resilience against increased PAL thickness (>200 nm). These are archetypically represented by PBDB-T:ITIC (thickness-sensitive) and PTQ10:Y6 (thickness-resilient). Kinetic Monte Carlo (kMC) simulations elucidate that the blend morphology alone, either in the form of an effective medium or energy cascade, can explain the experimental short-circuit current density and open-circuit voltage trends without tweaking the recombination parameters (cf. drift-diffusion, DD). High fill factors (FFs) in thick-film devices cannot, however, be reproduced by the kMC or DD simulations. ML models show that complementary absorbing donors and acceptors (shifted absorption onsets) mixed in balanced weight ratios provide a favorable hole back-transfer efficiency to increase the FF in thick-film devices. |
|---|---|
| Beschreibung: | Gesehen am 06.11.2025 |
| Beschreibung: | Online Resource |
| ISSN: | 1614-6840 |
| DOI: | 10.1002/aenm.202405735 |