Fast thermo-optic switching through parity-time symmetry breaking
Reconfigurable photonic integrated circuits (PICs) are key elements for emerging applications like photonic sensing, LiDAR, and quantum computing. In such applications, optical switches with fast response and robust fabrication methods are crucial for reprogramming linear optical transformations on...
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| Hauptverfasser: | , , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
25 Aug 2025
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| In: |
Optics express
Year: 2025, Jahrgang: 33, Heft: 17, Pages: 36100-36109 |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/OE.567666 |
| Online-Zugang: | Verlag, kostenfrei, Volltext: https://doi.org/10.1364/OE.567666 Verlag, kostenfrei, Volltext: https://opg.optica.org/oe/abstract.cfm?uri=oe-33-17-36100 
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| Verfasserangaben: | Ravi Pradip, Akhil Varri, Liam McRae, Frank Brückerhoff-Plückelmann, Daniel Wendland, Philipp Lohmann, Rongyang Xu, Anna P. Ovvyan, Shabnam Taheriniya, Wolfram Pernice, and Simone Ferrari |
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| 245 | 1 | 0 | |a Fast thermo-optic switching through parity-time symmetry breaking |c Ravi Pradip, Akhil Varri, Liam McRae, Frank Brückerhoff-Plückelmann, Daniel Wendland, Philipp Lohmann, Rongyang Xu, Anna P. Ovvyan, Shabnam Taheriniya, Wolfram Pernice, and Simone Ferrari |
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| 520 | |a Reconfigurable photonic integrated circuits (PICs) are key elements for emerging applications like photonic sensing, LiDAR, and quantum computing. In such applications, optical switches with fast response and robust fabrication methods are crucial for reprogramming linear optical transformations on demand. Here, we demonstrate a fast thermo-optic switching mechanism on the silicon nitride on insulator platform, leveraging parity-time symmetry breaking. The cladding-free design operating at 775 nm enables optical propagation in a partially metal-covered waveguide with minimal loss—an uncommon phenomenon given the typical absorption associated with metal proximity. The fabricated device exhibits a 7.1 µs rise time for a π phase shift, despite the weak thermo-optic coefficient in silicon nitride. Our design provides reproducible fabrication metrics and holds promises for large-scale photonic networks operating at visible wavelengths. | ||
| 650 | 4 | |a Optical properties | |
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| 650 | 4 | |a Physical vapor deposition | |
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| 650 | 4 | |a Silicon nitride | |
| 650 | 4 | |a Tunable diode lasers | |
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