Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound
Electrical rectification is an important electronic function in molecular electronics. Many organic molecules and metal complexes have been studied in this context, assisted by analysis of the related charge transport mechanisms. However, Re(I)-organometallic compounds, which hold many opportunities...
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| Hauptverfasser: | , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
22 Aug 2025
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| In: |
Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2025, Jahrgang: 13, Heft: 39, Pages: 20074-20084 |
| ISSN: | 2050-7534 |
| DOI: | 10.1039/D5TC01614B |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/D5TC01614B Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc01614b |
| Verfasserangaben: | Subas Rajbangshi, Nila Pal, Ritu Gupta, Robinur Rahman, Pradeep Sachan, Vladimir N. Nesterov, Lisa Roy, Shishir Ghosh, Michael Zharnikov and Prakash Chandra Mondal |
MARC
| LEADER | 00000naa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1950490866 | ||
| 003 | DE-627 | ||
| 005 | 20260128121443.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 260128s2025 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1039/D5TC01614B |2 doi | |
| 035 | |a (DE-627)1950490866 | ||
| 035 | |a (DE-599)KXP1950490866 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 30 |2 sdnb | ||
| 100 | 1 | |a Rajbangshi, Subas |e VerfasserIn |0 (DE-588)1388220016 |0 (DE-627)1950491366 |4 aut | |
| 245 | 1 | 0 | |a Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound |c Subas Rajbangshi, Nila Pal, Ritu Gupta, Robinur Rahman, Pradeep Sachan, Vladimir N. Nesterov, Lisa Roy, Shishir Ghosh, Michael Zharnikov and Prakash Chandra Mondal |
| 264 | 1 | |c 22 Aug 2025 | |
| 300 | |b Diagramme | ||
| 300 | |a 11 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 28.01.2026 | ||
| 520 | |a Electrical rectification is an important electronic function in molecular electronics. Many organic molecules and metal complexes have been studied in this context, assisted by analysis of the related charge transport mechanisms. However, Re(I)-organometallic compounds, which hold many opportunities in electronic functions, have not been explored in electronic circuitry so far. To this end, the present study focuses on emulating electrical current rectification by π-stacked Re(I) organometallic compounds embedded between p-doped Si and indium tin oxide electrodes in a two-terminal junction configuration. Among the tested compounds, viz. [Re(CO)4(PPh3){κ1-(N)-saccharinate}] (1) and [Re(CO)3(κ2-phen){κ1-(N)-saccharinate}] (2), the latter demonstrates a remarkable electrical current rectification ratio of ≈4 × 103 at ±2.0 V at room temperature. The model device, composed of 2, demonstrates proficient alternating current (AC) to direct current (DC) conversion at a frequency of up to 1 kHz, tested in a half-wave rectifier configuration. Temperature-dependent experimental current-voltage analysis implies the primary role of activated long-distance hopping for the charge transport and the asymmetric charge injection barrier heights at both electrode interfaces for current rectification. The above results lay the groundwork for using diverse organometallic compounds as circuit elements in nanoelectronic devices for specific electronic functions. | ||
| 700 | 1 | |a Pal, Nila |e VerfasserIn |4 aut | |
| 700 | 1 | |a Gupta, Ritu |e VerfasserIn |4 aut | |
| 700 | 1 | |a Rahman, Robinur |e VerfasserIn |4 aut | |
| 700 | 1 | |a Sachan, Pradeep |e VerfasserIn |4 aut | |
| 700 | 1 | |a Nesterov, Vladimir N. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Roy, Lisa |e VerfasserIn |4 aut | |
| 700 | 1 | |a Ghosh, Shishir |e VerfasserIn |4 aut | |
| 700 | 1 | |a Zharnikov, Michael |e VerfasserIn |0 (DE-588)1118537629 |0 (DE-627)872019810 |0 (DE-576)479525889 |4 aut | |
| 700 | 1 | |a Mondal, Prakash Chandra |e VerfasserIn |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials chemistry. C, Materials for optical and electronic devices |d London [u.a.] : RSC, 2013 |g 13(2025), 39, Seite 20074-20084 |h Online-Ressource |w (DE-627)735630577 |w (DE-600)2702245-6 |w (DE-576)37872956X |x 2050-7534 |7 nnas |a Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound |
| 773 | 1 | 8 | |g volume:13 |g year:2025 |g number:39 |g pages:20074-20084 |g extent:11 |a Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound |
| 856 | 4 | 0 | |u https://doi.org/10.1039/D5TC01614B |x Verlag |x Resolving-System |z lizenzpflichtig |3 Volltext |7 1 |
| 856 | 4 | 0 | |u https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc01614b |x Verlag |z lizenzpflichtig |3 Volltext |7 1 |
| 951 | |a AR | ||
| 992 | |a 20260128 | ||
| 993 | |a Article | ||
| 994 | |a 2025 | ||
| 998 | |g 1118537629 |a Zharnikov, Michael |m 1118537629:Zharnikov, Michael |d 120000 |d 120300 |e 120000PZ1118537629 |e 120300PZ1118537629 |k 0/120000/ |k 1/120000/120300/ |p 9 | ||
| 999 | |a KXP-PPN1950490866 |e 4863104499 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"physDesc":[{"noteIll":"Diagramme","extent":"11 S."}],"id":{"eki":["1950490866"],"doi":["10.1039/D5TC01614B"]},"origin":[{"dateIssuedDisp":"22 Aug 2025","dateIssuedKey":"2025"}],"type":{"media":"Online-Ressource","bibl":"article-journal"},"person":[{"display":"Rajbangshi, Subas","role":"aut","given":"Subas","family":"Rajbangshi"},{"display":"Pal, Nila","role":"aut","given":"Nila","family":"Pal"},{"family":"Gupta","given":"Ritu","role":"aut","display":"Gupta, Ritu"},{"family":"Rahman","given":"Robinur","role":"aut","display":"Rahman, Robinur"},{"role":"aut","display":"Sachan, Pradeep","family":"Sachan","given":"Pradeep"},{"display":"Nesterov, Vladimir N.","role":"aut","given":"Vladimir N.","family":"Nesterov"},{"role":"aut","display":"Roy, Lisa","family":"Roy","given":"Lisa"},{"role":"aut","display":"Ghosh, Shishir","family":"Ghosh","given":"Shishir"},{"role":"aut","display":"Zharnikov, Michael","family":"Zharnikov","given":"Michael"},{"family":"Mondal","given":"Prakash Chandra","role":"aut","display":"Mondal, Prakash Chandra"}],"relHost":[{"corporate":[{"role":"isb","display":"Royal Society of Chemistry"}],"titleAlt":[{"title":"Journal of materials chemistry / C"}],"language":["eng"],"title":[{"title":"Journal of materials chemistry","partname":"Materials for optical and electronic devices","title_sort":"Journal of materials chemistry"}],"pubHistory":["1.2013 -"],"part":{"issue":"39","text":"13(2025), 39, Seite 20074-20084","year":"2025","volume":"13","extent":"11","pages":"20074-20084"},"recId":"735630577","origin":[{"publisher":"RSC","dateIssuedKey":"2013","dateIssuedDisp":"2013-","publisherPlace":"London [u.a.]"}],"type":{"bibl":"periodical","media":"Online-Ressource"},"note":["Gesehen am 31.03.14"],"id":{"issn":["2050-7534"],"eki":["735630577"],"zdb":["2702245-6"]},"physDesc":[{"extent":"Online-Ressource"}],"disp":"Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compoundJournal of materials chemistry. C, Materials for optical and electronic devices"}],"note":["Gesehen am 28.01.2026"],"recId":"1950490866","name":{"displayForm":["Subas Rajbangshi, Nila Pal, Ritu Gupta, Robinur Rahman, Pradeep Sachan, Vladimir N. Nesterov, Lisa Roy, Shishir Ghosh, Michael Zharnikov and Prakash Chandra Mondal"]},"language":["eng"],"title":[{"title":"Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound","title_sort":"Asymmetric charge injection barrier yields high rectification in a rhenium(I)-organometallic compound"}]} | ||
| SRT | |a RAJBANGSHIASYMMETRIC2220 | ||