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Fabrication-friendly all-optical plasmonically-enhanced integrated phase-change photonic memory device

The potential for realizing fast, energy-efficient integrated photonic memory and computing devices developed from the nanoscale light-squeezing and electric-field enhancing capability of plasmonic resonant structures and the intrinsic tuneability of chalcogenide phase-change materials is explored....

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Bibliographische Detailangaben
Hauptverfasser: Song, Junchao (VerfasserIn) , Pady, Joe (VerfasserIn) , Gemo, Emanuele (VerfasserIn) , Farmakidis, Nikolaos (VerfasserIn) , Bhaskaran, Harish (VerfasserIn) , Bente, Ivonne (VerfasserIn) , Pernice, Wolfram (VerfasserIn) , Wright, David (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 15 Dec 2025
In: Optics express
Year: 2025, Jahrgang: 33, Heft: 25, Pages: 52965-52977
ISSN:1094-4087
DOI:10.1364/OE.577518
Online-Zugang:Verlag, kostenfrei, Volltext: https://doi.org/10.1364/OE.577518
Verlag, kostenfrei, Volltext: https://opg.optica.org/oe/abstract.cfm?uri=oe-33-25-52965
Volltext
Verfasserangaben:Junchao Song, Joe Pady, Emanuele Gemo, Nikolaos Farmakidis, Harish Bhaskaran, Ivonne Bente, Wolfram H.P. Pernice, and C. David Wright
Beschreibung
Zusammenfassung:The potential for realizing fast, energy-efficient integrated photonic memory and computing devices developed from the nanoscale light-squeezing and electric-field enhancing capability of plasmonic resonant structures and the intrinsic tuneability of chalcogenide phase-change materials is explored. We concentrate on designs that should be readily manufacturable, comprising a plasmonic dimer-bar nanoantenna deposited on top of a phase-change cell, itself deposited on top of an integrated photonic waveguide. Device optical properties and switching behavior are determined by a combination of finite-element thermo-optic and bespoke phase-change computational models. The results show that suitably designed devices can achieve switching energies in the tens of pico-Joule range and switching speeds in the tens of nanosecond range, a very considerable improvement over conventional designs, and showing a good trade-off between the device performance and fabrication complexity.
Beschreibung:Veröffentlicht: 9. Dezember 2025
Gesehen am 10.02.2026
Beschreibung:Online Resource
ISSN:1094-4087
DOI:10.1364/OE.577518

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