SmO thin films: a flexible route to correlated flat bands with nontrivial topology
Using density functional theory based calculations, we show that the correlated mixed-valent compound SmO is a three-dimensional strongly topological semimetal as a result of a 4f−5d band inversion at the X point. The [001] surface Bloch spectral density reveals two weakly interacting Dirac cones th...
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| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
18 May 2015
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| In: |
Physical review. B, Condensed matter and materials physics
Year: 2015, Jahrgang: 91, Heft: 19, Pages: 195127 |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.91.195127 |
| Online-Zugang: | Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevB.91.195127 Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.91.195127 
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| Verfasserangaben: | Deepa Kasinathan, Klaus Koepernik, L.H. Tjeng, and Maurits W. Haverkort |
| Zusammenfassung: | Using density functional theory based calculations, we show that the correlated mixed-valent compound SmO is a three-dimensional strongly topological semimetal as a result of a 4f−5d band inversion at the X point. The [001] surface Bloch spectral density reveals two weakly interacting Dirac cones that are quasidegenerate at the ¯¯¯¯M point and another single Dirac cone at the ¯¯¯Γ point. We also show that the topological nontriviality in SmO is very robust and prevails for a wide range of lattice parameters, making it an ideal candidate to investigate topological nontrivial correlated flat bands in thin-film form. Moreover, the electron filling is tunable by strain. In addition, we find conditions for which the inversion is of the 4f−6s type, making SmO to be a rather unique system. The similarities of the crystal symmetry and the lattice constant of SmO to the well studied ferromagnetic semiconductor EuO, makes SmO/EuO thin film interfaces an excellent contender towards realizing the quantum anomalous Hall effect in a strongly correlated electron system. |
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| Beschreibung: | Gesehen am 20.09.2017 |
| Beschreibung: | Online Resource |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.91.195127 |