Sensitivity studies for volume averaged models of plasma etch reactors
A well-stirred reactor model is employed to model the etching of silicon in low pressure chlorine/argon plasmas. The model gives the spatially averaged species composition and etch rate in a plasma etch reactor by solving conservation equations for species, mass and electron energy distribution func...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
July 2001
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| In: |
Surface and coatings technology
Year: 2001, Jahrgang: 142, Heft: Supplement C, Pages: 536-539 |
| ISSN: | 1879-3347 |
| DOI: | 10.1016/S0257-8972(01)01068-4 |
| Online-Zugang: | Verlag, Volltext: http://dx.doi.org/10.1016/S0257-8972(01)01068-4 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S0257897201010684 
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| Verfasserangaben: | S. Kleditzsch, U. Riedel |
MARC
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| 520 | |a A well-stirred reactor model is employed to model the etching of silicon in low pressure chlorine/argon plasmas. The model gives the spatially averaged species composition and etch rate in a plasma etch reactor by solving conservation equations for species, mass and electron energy distribution function (EEDF). Systematic sensitivity analyses, made possible by a new iterative approach, allows the identification of key parameters for improved fault detection and model based process control of plasma reactors. | ||
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| 650 | 4 | |a Chlorine | |
| 650 | 4 | |a Plasma | |
| 650 | 4 | |a Sensitivity studies | |
| 650 | 4 | |a Silicon | |
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