Growth and properties of strained VO x thin films with controlled stoichiometry
We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-Rutherford backscattering spectrometry and the vanadium valence using x-ray-absorption spectroscopy. The upper and lower stoichiometry limits...
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| Main Authors: | , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
13 February 2004
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| In: |
Physical review. B, Condensed matter and materials physics
Year: 2004, Volume: 69, Issue: 7, Pages: 075404 |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.69.075404 |
| Online Access: | Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevB.69.075404 Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.69.075404 
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| Author Notes: | A.D. Rata, A R. Chezan, M.W. Haverkort, H.H. Hsieh, H.-J. Lin, C.T. Chen, L.H. Tjeng, and T. Hibma |
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Growth and properties of strained VOx thin films with controlled stoichiometry
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