Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption
The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached und...
Gespeichert in:
| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) Kapitel/Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2010
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| In: |
Arxiv
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| Online-Zugang: | Verlag, kostenfrei, Volltext: http://arxiv.org/abs/1001.0477
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| Verfasserangaben: | F. Rodolakis, P. Hansmann, J.-P. Rueff, A. Toschi, M.W. Haverkort, G. Sangiovanni, A. Tanaka, T. Saha-Dasgupta, O.K. Andersen, K. Held, M. Sikora, I. Alliot, J.-P. Itié, F. Baudelet, P. Wzietek, P. Metcalf, and M. Marsi |
| Zusammenfassung: | The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3 |
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| Beschreibung: | Gesehen am 27.11.2017 Die Ziffern 2 und 3 im Titel sind tiefgestellt |
| Beschreibung: | Online Resource |