Characterizing the local vectorial electric field near an atom chip using Rydberg-state spectroscopy

We use the sensitive response to electric fields of Rydberg atoms to characterize all three vector components of the local electric field close to an atom-chip surface. We measured Stark-Zeeman maps of S and D Rydberg states using an elongated cloud of ultracold rubidium atoms (temperature T∼2.5μK)...

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Bibliographic Details
Main Authors: Cisternas San Martin, Nataly (Author) , Lochead, Graham (Author)
Format: Article (Journal)
Language:English
Published: 25 July 2017
In: Physical review
Year: 2017, Volume: 96, Issue: 1, Pages: 1-7
ISSN:2469-9934
DOI:10.1103/PhysRevA.96.013425
Online Access:Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevA.96.013425
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevA.96.013425
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Author Notes:N. Cisternas, Julius de Hond, G. Lochead, R.J.C. Spreeuw, H.B. van Linden van den Heuvell, N.J. van Druten
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Summary:We use the sensitive response to electric fields of Rydberg atoms to characterize all three vector components of the local electric field close to an atom-chip surface. We measured Stark-Zeeman maps of S and D Rydberg states using an elongated cloud of ultracold rubidium atoms (temperature T∼2.5μK) trapped magnetically 100μm from the chip surface. The spectroscopy of S states yields a calibration for the generated local electric field at the position of the atoms. The values for different components of the field are extracted from the more complex response of D states to the combined electric and magnetic fields. From the analysis we find residual fields in the two uncompensated directions of 0.0±0.2 and 1.98±0.09 V/cm. This method also allows us to extract a value for the relevant field gradient along the long axis of the cloud. The manipulation of electric fields and the magnetic trapping are both done using on-chip wires, making this setup a promising candidate to observe Rydberg-mediated interactions on a chip.
Item Description:Gesehen am 03.08.2018
Physical Description:Online Resource
ISSN:2469-9934
DOI:10.1103/PhysRevA.96.013425