Electrolyte-gated n-type transistors produced from aqueous inks of WS2 nanosheets
Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. T...
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| Main Authors: | , , , , , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
2019
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| In: |
Advanced functional materials
Year: 2018, Volume: 29, Issue: 4 |
| ISSN: | 1616-3028 |
| DOI: | 10.1002/adfm.201804387 |
| Online Access: | Verlag, Volltext: http://dx.doi.org/10.1002/adfm.201804387 Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201804387 
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| Author Notes: | Thomas M. Higgins, Sean Finn, Maik Matthiesen, Sebastian Grieger, Kevin Synnatschke, Maximilian Brohmann, Marcel Rother, Claudia Backes, and Jana Zaumseil* |
| Summary: | Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width-normalized on-conductances of up to 0.27 µS µm−1 and estimated electron mobilities around 0.01 cm2 V−1 s−1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm−3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application. |
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| Item Description: | Published online: December 11, 2018 Gesehen am 04.03.2019 Im Text ist die Zahl "2" tiefgestellt |
| Physical Description: | Online Resource |
| ISSN: | 1616-3028 |
| DOI: | 10.1002/adfm.201804387 |