Two-terminal molecular memory through reversible switching of quantum interference features in tunneling junctions

Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores fro...

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Bibliographic Details
Main Authors: Carlotti, Marco (Author) , Sauter, Eric (Author) , Zharnikov, Michael (Author)
Format: Article (Journal)
Language:English
Published: November 26, 2018
In: Angewandte Chemie. International edition
Year: 2018, Volume: 57, Issue: 48, Pages: 15681-15685
ISSN:1521-3773
DOI:10.1002/anie.201807879
Online Access:Verlag, Volltext: https://doi.org/10.1002/anie.201807879
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/anie.201807879
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Author Notes:Marco Carlotti, Saurabh Soni, Sumit Kumar, Yong Ai, Eric Sauter, Michael Zharnikov, and Ryan C. Chiechi
Description
Summary:Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores from a quinoid to a hydroquinoid form. The resulting rearomatization converts the bond topology from a cross-conjugated to a linearly conjugated π system. The cross-conjugated form correlates to the appearance of an interference feature in the transmission spectrum that vanishes for the linearly conjugated form. Owing to the presence of electron-withdrawing nitrile groups, the reduction potential and the interference feature lie close to the work function and Fermi level of the metallic substrate. We exploited the relationship between conjugation patterns and quantum interference to create nonvolatile memory in proto-devices using eutectic Ga-In as the top contact.
Item Description:First published: 27 September 2018
Gesehen am 29.03.2019
Physical Description:Online Resource
ISSN:1521-3773
DOI:10.1002/anie.201807879