Characterization results of a HVCMOS sensor for ATLAS
High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [...
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| Main Authors: | , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
August 2019
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| In: |
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Year: 2018, Volume: 936, Pages: 654-656 |
| ISSN: | 1872-9576 |
| DOI: | 10.1016/j.nima.2018.08.069 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1016/j.nima.2018.08.069 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S0168900218310271 
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| Author Notes: | F. Ehrler, M. Benoit, D. Dannheim, M. Kiehn, A. Nürnberg, I. Perić, M. Prathapan, R. Schimassek, T. Vanat, M. Vicente, A. Weber, H. Zhang |
| Summary: | High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [1], HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix_Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate. |
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| Item Description: | Available online 23 August 2018 Gesehen am 09.07.2019 |
| Physical Description: | Online Resource |
| ISSN: | 1872-9576 |
| DOI: | 10.1016/j.nima.2018.08.069 |