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Characterization results of a HVCMOS sensor for ATLAS

High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [...

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Main Authors: Ehrler, Felix (Author) , Weber, Alena (Author)
Format: Article (Journal)
Language:English
Published: August 2019
In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Year: 2018, Volume: 936, Pages: 654-656
ISSN:1872-9576
DOI:10.1016/j.nima.2018.08.069
Online Access:Verlag, Volltext: https://doi.org/10.1016/j.nima.2018.08.069
Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S0168900218310271
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Author Notes:F. Ehrler, M. Benoit, D. Dannheim, M. Kiehn, A. Nürnberg, I. Perić, M. Prathapan, R. Schimassek, T. Vanat, M. Vicente, A. Weber, H. Zhang

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LEADER 00000caa a2200000 c 4500
001 1668861542
003 DE-627
005 20220816185859.0
007 cr uuu---uuuuu
008 190709r20192018xx |||||o 00| ||eng c
024 7 |a 10.1016/j.nima.2018.08.069  |2 doi 
035 |a (DE-627)1668861542 
035 |a (DE-599)KXP1668861542 
035 |a (OCoLC)1341233098 
040 |a DE-627  |b ger  |c DE-627  |e rda 
041 |a eng 
084 |a 29  |2 sdnb 
100 1 |a Ehrler, Felix  |e VerfasserIn  |0 (DE-588)1190135604  |0 (DE-627)1668861712  |4 aut 
245 1 0 |a Characterization results of a HVCMOS sensor for ATLAS  |c F. Ehrler, M. Benoit, D. Dannheim, M. Kiehn, A. Nürnberg, I. Perić, M. Prathapan, R. Schimassek, T. Vanat, M. Vicente, A. Weber, H. Zhang 
264 1 |c August 2019 
300 |a 3 
336 |a Text  |b txt  |2 rdacontent 
337 |a Computermedien  |b c  |2 rdamedia 
338 |a Online-Ressource  |b cr  |2 rdacarrier 
500 |a Available online 23 August 2018 
500 |a Gesehen am 09.07.2019 
520 |a High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [1], HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix_Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate. 
534 |c 2018 
650 4 |a HVCMOS 
650 4 |a HVMAPS 
650 4 |a ATLAS 
650 4 |a IsoPMOS 
650 4 |a PPtB 
650 4 |a Time walk correction by adaptive ToT 
700 1 |a Weber, Alena  |d 1992-  |e VerfasserIn  |0 (DE-588)1189860406  |0 (DE-627)1668617927  |4 aut 
773 0 8 |i Enthalten in  |t Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment  |d [Amsterdam] : Elsevier, 1984  |g 936(2019), Seite 654-656  |h Online-Ressource  |w (DE-627)266014666  |w (DE-600)1466532-3  |w (DE-576)074959743  |x 1872-9576  |7 nnas  |a Characterization results of a HVCMOS sensor for ATLAS 
773 1 8 |g volume:936  |g year:2019  |g pages:654-656  |g extent:3  |a Characterization results of a HVCMOS sensor for ATLAS 
856 4 0 |u https://doi.org/10.1016/j.nima.2018.08.069  |x Verlag  |x Resolving-System  |3 Volltext 
856 4 0 |u http://www.sciencedirect.com/science/article/pii/S0168900218310271  |x Verlag  |3 Volltext 
951 |a AR 
992 |a 20190709 
993 |a Article 
994 |a 2019 
998 |g 1189860406  |a Weber, Alena  |m 1189860406:Weber, Alena  |d 130000  |d 130200  |e 130000PW1189860406  |e 130200PW1189860406  |k 0/130000/  |k 1/130000/130200/  |p 10 
999 |a KXP-PPN1668861542  |e 3492286550 
BIB |a Y 
SER |a journal 
JSO |a {"origin":[{"dateIssuedKey":"2019","dateIssuedDisp":"August 2019"}],"id":{"eki":["1668861542"],"doi":["10.1016/j.nima.2018.08.069"]},"name":{"displayForm":["F. Ehrler, M. Benoit, D. Dannheim, M. Kiehn, A. Nürnberg, I. Perić, M. Prathapan, R. Schimassek, T. Vanat, M. Vicente, A. Weber, H. Zhang"]},"physDesc":[{"extent":"3 S."}],"relHost":[{"language":["eng"],"recId":"266014666","disp":"Characterization results of a HVCMOS sensor for ATLASNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment","type":{"media":"Online-Ressource","bibl":"periodical"},"note":["Gesehen am 24.05.23"],"titleAlt":[{"title":"Nuclear instruments & methods in physics research / A"}],"part":{"year":"2019","pages":"654-656","volume":"936","text":"936(2019), Seite 654-656","extent":"3"},"pubHistory":["Nachgewiesen 226.1984 -"],"title":[{"partname":"Accelerators, spectrometers, detectors and associated equipment","title_sort":"Nuclear instruments & methods in physics research","title":"Nuclear instruments & methods in physics research","subtitle":"a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics"}],"physDesc":[{"extent":"Online-Ressource"}],"id":{"issn":["1872-9576"],"zdb":["1466532-3"],"eki":["266014666"]},"origin":[{"publisherPlace":"[Amsterdam] ; Amsterdam","dateIssuedKey":"1994","publisher":"Elsevier ; North-Holland Publ. Co.","dateIssuedDisp":"1994-"}]}],"title":[{"title_sort":"Characterization results of a HVCMOS sensor for ATLAS","title":"Characterization results of a HVCMOS sensor for ATLAS"}],"person":[{"roleDisplay":"VerfasserIn","display":"Ehrler, Felix","role":"aut","family":"Ehrler","given":"Felix"},{"display":"Weber, Alena","roleDisplay":"VerfasserIn","role":"aut","family":"Weber","given":"Alena"}],"note":["Available online 23 August 2018","Gesehen am 09.07.2019"],"type":{"bibl":"article-journal","media":"Online-Ressource"},"recId":"1668861542","language":["eng"]} 
SRT |a EHRLERFELICHARACTERI2019 

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