Characterization and compact modeling of self-aligned short-channel organic transistors
In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (T...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
06 September 2018
|
| In: |
IEEE transactions on electron devices
Year: 2018, Volume: 65, Issue: 10, Pages: 4563-4570 |
| ISSN: | 1557-9646 |
| DOI: | 10.1109/TED.2018.2867364 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1109/TED.2018.2867364
|
| Author Notes: | M. Torres-Miranda, A. Petritz, E. Karner-Petritz, C. Prietl, E. Sauter, M. Zharnikov, H. Gold, B. Stadlober |
| Summary: | In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (TFTs) is tailored with high accuracy for the subthreshold regime in order to include the channel length dependence of two semiempirical parameters, viz., the effective mobility and the onset voltage. In addition, we demonstrate the modeling of the hump effect, a phenomenon often present in TFTs fabricated by lithographic methods. |
|---|---|
| Item Description: | Gesehen am 12.08.2019 |
| Physical Description: | Online Resource |
| ISSN: | 1557-9646 |
| DOI: | 10.1109/TED.2018.2867364 |