Characterization and compact modeling of self-aligned short-channel organic transistors
In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (T...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
06 September 2018
|
| In: |
IEEE transactions on electron devices
Year: 2018, Jahrgang: 65, Heft: 10, Pages: 4563-4570 |
| ISSN: | 1557-9646 |
| DOI: | 10.1109/TED.2018.2867364 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1109/TED.2018.2867364
|
| Verfasserangaben: | M. Torres-Miranda, A. Petritz, E. Karner-Petritz, C. Prietl, E. Sauter, M. Zharnikov, H. Gold, B. Stadlober |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1671185382 | ||
| 003 | DE-627 | ||
| 005 | 20230428190750.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 190812s2018 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1109/TED.2018.2867364 |2 doi | |
| 035 | |a (DE-627)1671185382 | ||
| 035 | |a (DE-599)KXP1671185382 | ||
| 035 | |a (OCoLC)1341235699 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 30 |2 sdnb | ||
| 100 | 1 | |a Torres-Miranda, Miguel |e VerfasserIn |0 (DE-588)1192695291 |0 (DE-627)1671185307 |4 aut | |
| 245 | 1 | 0 | |a Characterization and compact modeling of self-aligned short-channel organic transistors |c M. Torres-Miranda, A. Petritz, E. Karner-Petritz, C. Prietl, E. Sauter, M. Zharnikov, H. Gold, B. Stadlober |
| 264 | 1 | |c 06 September 2018 | |
| 300 | |a 8 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 12.08.2019 | ||
| 520 | |a In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (TFTs) is tailored with high accuracy for the subthreshold regime in order to include the channel length dependence of two semiempirical parameters, viz., the effective mobility and the onset voltage. In addition, we demonstrate the modeling of the hump effect, a phenomenon often present in TFTs fabricated by lithographic methods. | ||
| 650 | 4 | |a channel length dependence | |
| 650 | 4 | |a drain contacts | |
| 650 | 4 | |a flexible organic thin-film transistors | |
| 650 | 4 | |a Gold | |
| 650 | 4 | |a hump effect | |
| 650 | 4 | |a Integrated circuit modeling | |
| 650 | 4 | |a Logic gates | |
| 650 | 4 | |a Organic thin film transistors | |
| 650 | 4 | |a Organic thin-film transistors (OTFTs) | |
| 650 | 4 | |a parameter extraction | |
| 650 | 4 | |a photolithography | |
| 650 | 4 | |a Resistance | |
| 650 | 4 | |a self-aligned short-channel organic transistors | |
| 650 | 4 | |a self-alignment | |
| 650 | 4 | |a semiconductor device models | |
| 650 | 4 | |a semiempirical parameters | |
| 650 | 4 | |a source contacts | |
| 650 | 4 | |a SPICE compact model | |
| 650 | 4 | |a SPICE model | |
| 650 | 4 | |a subthreshold regime | |
| 650 | 4 | |a TFT | |
| 650 | 4 | |a thin film transistors | |
| 650 | 4 | |a transistor characterization | |
| 700 | 1 | |a Sauter, Eric |e VerfasserIn |0 (DE-588)1148321241 |0 (DE-627)100862537X |0 (DE-576)49628410X |4 aut | |
| 700 | 1 | |a Zharnikov, Michael |e VerfasserIn |0 (DE-588)1118537629 |0 (DE-627)872019810 |0 (DE-576)479525889 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |a Institute of Electrical and Electronics Engineers |t IEEE transactions on electron devices |d New York, NY : IEEE, 1963 |g 65(2018), 10, Seite 4563-4570 |h Online-Ressource |w (DE-627)324530951 |w (DE-600)2028088-9 |w (DE-576)094086028 |x 1557-9646 |7 nnas |
| 773 | 1 | 8 | |g volume:65 |g year:2018 |g number:10 |g pages:4563-4570 |g extent:8 |a Characterization and compact modeling of self-aligned short-channel organic transistors |
| 856 | 4 | 0 | |u https://doi.org/10.1109/TED.2018.2867364 |x Verlag |x Resolving-System |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20190812 | ||
| 993 | |a Article | ||
| 994 | |a 2018 | ||
| 998 | |g 1118537629 |a Zharnikov, Michael |m 1118537629:Zharnikov, Michael |d 120000 |d 120300 |e 120000PZ1118537629 |e 120300PZ1118537629 |k 0/120000/ |k 1/120000/120300/ |p 6 | ||
| 998 | |g 1148321241 |a Sauter, Eric |m 1148321241:Sauter, Eric |d 120000 |d 120300 |e 120000PS1148321241 |e 120300PS1148321241 |k 0/120000/ |k 1/120000/120300/ |p 5 | ||
| 999 | |a KXP-PPN1671185382 |e 3506426834 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"origin":[{"dateIssuedKey":"2018","dateIssuedDisp":"06 September 2018"}],"id":{"doi":["10.1109/TED.2018.2867364"],"eki":["1671185382"]},"recId":"1671185382","name":{"displayForm":["M. Torres-Miranda, A. Petritz, E. Karner-Petritz, C. Prietl, E. Sauter, M. Zharnikov, H. Gold, B. Stadlober"]},"title":[{"title_sort":"Characterization and compact modeling of self-aligned short-channel organic transistors","title":"Characterization and compact modeling of self-aligned short-channel organic transistors"}],"person":[{"display":"Torres-Miranda, Miguel","family":"Torres-Miranda","given":"Miguel","role":"aut"},{"given":"Eric","role":"aut","family":"Sauter","display":"Sauter, Eric"},{"family":"Zharnikov","role":"aut","given":"Michael","display":"Zharnikov, Michael"}],"physDesc":[{"extent":"8 S."}],"language":["eng"],"type":{"media":"Online-Ressource","bibl":"article-journal"},"relHost":[{"titleAlt":[{"title":"Transactions on electron devices"},{"title":"ED"}],"note":["Gesehen am 07.09.2022"],"pubHistory":["Volume ED 10, number 1 (January 1963)-"],"part":{"issue":"10","year":"2018","pages":"4563-4570","volume":"65","text":"65(2018), 10, Seite 4563-4570","extent":"8"},"type":{"bibl":"periodical","media":"Online-Ressource"},"corporate":[{"display":"Institute of Electrical and Electronics Engineers","role":"aut"},{"role":"isb","display":"IEEE Electron Devices Society"}],"physDesc":[{"extent":"Online-Ressource"}],"language":["eng"],"title":[{"title":"IEEE transactions on electron devices","subtitle":"ED ; a publication of the IEEE Electron Devices Society","title_sort":"IEEE transactions on electron devices"}],"recId":"324530951","disp":"Institute of Electrical and Electronics EngineersIEEE transactions on electron devices","origin":[{"publisherPlace":"New York, NY","publisher":"IEEE","dateIssuedKey":"1963","dateIssuedDisp":"1963-"}],"id":{"eki":["324530951"],"issn":["1557-9646"],"zdb":["2028088-9"],"doi":["10.1109/TED.16"]}}],"note":["Gesehen am 12.08.2019"]} | ||
| SRT | |a TORRESMIRACHARACTERI0620 | ||