The operational mechanism of ferroelectric-driven organic resistive switches
The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modu...
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| Main Authors: | , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
2012
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| In: |
Organic electronics
Year: 2011, Volume: 13, Issue: 1, Pages: 147-152 |
| DOI: | 10.1016/j.orgel.2011.10.013 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1016/j.orgel.2011.10.013 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S1566119911003569 
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| Author Notes: | Martijn Kemerink, Kamal Asadi, Paul W. M. Blom, Dago M. de Leeuw |
| Summary: | The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1Gb/cm2. |
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| Item Description: | Available online 7 November 2011 Gesehen am 04.12.2019 |
| Physical Description: | Online Resource |
| DOI: | 10.1016/j.orgel.2011.10.013 |