The operational mechanism of ferroelectric-driven organic resistive switches
The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modu...
Gespeichert in:
| Hauptverfasser: | , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2012
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| In: |
Organic electronics
Year: 2011, Jahrgang: 13, Heft: 1, Pages: 147-152 |
| DOI: | 10.1016/j.orgel.2011.10.013 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1016/j.orgel.2011.10.013 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S1566119911003569 
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| Verfasserangaben: | Martijn Kemerink, Kamal Asadi, Paul W. M. Blom, Dago M. de Leeuw |
MARC
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| 520 | |a The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1Gb/cm2. | ||
| 534 | |c 2011 | ||
| 650 | 4 | |a Charge transport | |
| 650 | 4 | |a Data storage | |
| 650 | 4 | |a Ferroelectric nanostructures | |
| 650 | 4 | |a Organic semiconductors | |
| 650 | 4 | |a Thin films | |
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| 700 | 1 | |a Leeuw, Dago M. de |e VerfasserIn |0 (DE-588)1201143225 |0 (DE-627)1684442486 |4 aut | |
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