Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors
The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
25 September 2009
|
| In: |
Physical review. B, Condensed matter and materials physics
Year: 2009, Volume: 80, Issue: 11 |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.80.115325 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1103/PhysRevB.80.115325 Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.80.115325 
|
| Author Notes: | M. Kemerink, T. Hallam, M.J. Lee, N. Zhao, M. Caironi, and H. Sirringhaus |
| Summary: | The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated. The shape of the channel potential is inconsistent with a density-independent mobility. We find that the variable range hopping model as derived by Vissenberg and Matters for an exponential density of states [Phys. Rev. B 57, 12964 (1998)] consistently describes the data. |
|---|---|
| Item Description: | Gesehen am 09.12.2019 |
| Physical Description: | Online Resource |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.80.115325 |