Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors
The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated...
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| Hauptverfasser: | , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
25 September 2009
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| In: |
Physical review. B, Condensed matter and materials physics
Year: 2009, Jahrgang: 80, Heft: 11 |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.80.115325 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1103/PhysRevB.80.115325 Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.80.115325 
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| Verfasserangaben: | M. Kemerink, T. Hallam, M.J. Lee, N. Zhao, M. Caironi, and H. Sirringhaus |
| Zusammenfassung: | The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated. The shape of the channel potential is inconsistent with a density-independent mobility. We find that the variable range hopping model as derived by Vissenberg and Matters for an exponential density of states [Phys. Rev. B 57, 12964 (1998)] consistently describes the data. |
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| Beschreibung: | Gesehen am 09.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.80.115325 |