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Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors

The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated...

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Main Authors: Kemerink, Martijn (Author) , Hallam, Toby (Author) , Lee, MiJung (Author) , Zhao, Ni (Author) , Caironi, M. (Author) , Sirringhaus, Henning (Author)
Format: Article (Journal)
Language:English
Published: 25 September 2009
In: Physical review. B, Condensed matter and materials physics
Year: 2009, Volume: 80, Issue: 11
ISSN:1550-235X
DOI:10.1103/PhysRevB.80.115325
Online Access:Verlag, Volltext: https://doi.org/10.1103/PhysRevB.80.115325
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.80.115325
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Author Notes:M. Kemerink, T. Hallam, M.J. Lee, N. Zhao, M. Caironi, and H. Sirringhaus

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520 |a The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H2O traces could be eliminated. The shape of the channel potential is inconsistent with a density-independent mobility. We find that the variable range hopping model as derived by Vissenberg and Matters for an exponential density of states [Phys. Rev. B 57, 12964 (1998)] consistently describes the data. 
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