Exchange-correlation energy of a hole gas including valence band coupling

We have calculated an accurate exchange-correlation energy of a hole gas, including the complexities related to the valence band coupling as occurring in semiconductors like GaAs, but excluding the band warping. A parametrization for the dependence on the density and the ratio between light- and hea...

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Hauptverfasser: Bobbert, Peter A. (VerfasserIn) , Wieldraaijer, H. (VerfasserIn) , Weide, Rommie Y. van der (VerfasserIn) , Kemerink, Martijn (VerfasserIn) , Koenraad, Paulus M. (VerfasserIn) , Wolter, Joachim H. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 15 August 1997
In: Physical review. B, Condensed matter and materials physics
Year: 1997, Jahrgang: 56, Heft: 7, Pages: 3664-3671
ISSN:1550-235X
DOI:10.1103/PhysRevB.56.3664
Online-Zugang:Verlag, Volltext: https://doi.org/10.1103/PhysRevB.56.3664
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.56.3664
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Verfasserangaben:P.A. Bobbert, H. Wieldraaijer, R. van der Weide, M. Kemerink, P.M. Koenraad, and J.H. Wolter
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Zusammenfassung:We have calculated an accurate exchange-correlation energy of a hole gas, including the complexities related to the valence band coupling as occurring in semiconductors like GaAs, but excluding the band warping. A parametrization for the dependence on the density and the ratio between light- and heavy-hole masses is given. We apply our results to a hole gas in an AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well and calculate the two-dimensional band structure and the band-gap renormalization. The inclusion of the valence band coupling in the calculation of the exchange-correlation potentials for holes and electrons leads to a much better agreement between theoretical and experimental data than when it is omitted.
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Beschreibung:Online Resource
ISSN:1550-235X
DOI:10.1103/PhysRevB.56.3664