Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress
The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a pp<math display="inline" overflow="scroll" altimg="eq-00001.gif"><...
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| Main Authors: | , , , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
08 May 2007
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| In: |
Applied physics letters
Year: 2007, Volume: 90, Issue: 19, Pages: 192104 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2737419 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1063/1.2737419 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.2737419 
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| Author Notes: | S.G.J. Mathijssen, M. Cölle and A.J.G. Mank, M. Kemerink and P.A. Bobbert, D.M. de Leeuw |
| Summary: | The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a pp<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mi>p</mi></math>-type transistor is demonstrated. During gate bias stress, a decrease in current is observed, that is correlated with the increased curvature of the potential profile. After gate bias stress, the potential changes consistently in all operating regimes: the potential profile gets more convex, in accordance with the simultaneously observed shift in threshold voltage. The changes of the potential are attributed to positive immobile charges, which contribute to the potential, but not to the current. |
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| Item Description: | Gesehen am 11.12.2019 |
| Physical Description: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2737419 |