Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress
The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a pp<math display="inline" overflow="scroll" altimg="eq-00001.gif"><...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
08 May 2007
|
| In: |
Applied physics letters
Year: 2007, Jahrgang: 90, Heft: 19, Pages: 192104 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2737419 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.2737419 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.2737419 |
| Verfasserangaben: | S.G.J. Mathijssen, M. Cölle and A.J.G. Mank, M. Kemerink and P.A. Bobbert, D.M. de Leeuw |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1685169821 | ||
| 003 | DE-627 | ||
| 005 | 20220817181703.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 191211s2007 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1063/1.2737419 |2 doi | |
| 035 | |a (DE-627)1685169821 | ||
| 035 | |a (DE-599)KXP1685169821 | ||
| 035 | |a (OCoLC)1341281349 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 29 |2 sdnb | ||
| 100 | 1 | |a Mathijssen, Simon G. J. |e VerfasserIn |0 (DE-588)1201452686 |0 (DE-627)1685170706 |4 aut | |
| 245 | 1 | 0 | |a Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress |c S.G.J. Mathijssen, M. Cölle and A.J.G. Mank, M. Kemerink and P.A. Bobbert, D.M. de Leeuw |
| 264 | 1 | |c 08 May 2007 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 11.12.2019 | ||
| 520 | |a The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a pp<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mi>p</mi></math>-type transistor is demonstrated. During gate bias stress, a decrease in current is observed, that is correlated with the increased curvature of the potential profile. After gate bias stress, the potential changes consistently in all operating regimes: the potential profile gets more convex, in accordance with the simultaneously observed shift in threshold voltage. The changes of the potential are attributed to positive immobile charges, which contribute to the potential, but not to the current. | ||
| 700 | 1 | |a Cölle, Michael |d 1969- |e VerfasserIn |0 (DE-588)128936649 |0 (DE-627)385681690 |0 (DE-576)297407783 |4 aut | |
| 700 | 1 | |a Mank, A. J. G. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Kemerink, Martijn |e VerfasserIn |0 (DE-588)1200360753 |0 (DE-627)1683330668 |4 aut | |
| 700 | 1 | |a Bobbert, Peter A. |e VerfasserIn |0 (DE-627)1235286193 |0 (DE-576)165286199 |4 aut | |
| 700 | 1 | |a Leeuw, Dago M. de |e VerfasserIn |0 (DE-588)1201143225 |0 (DE-627)1684442486 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Applied physics letters |d Melville, NY : American Inst. of Physics, 1962 |g 90(2007), 19, Seite 192104 |h Online-Ressource |w (DE-627)267324952 |w (DE-600)1469436-0 |w (DE-576)077052501 |x 1077-3118 |7 nnas |a Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress |
| 773 | 1 | 8 | |g volume:90 |g year:2007 |g number:19 |g pages:192104 |a Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress |
| 856 | 4 | 0 | |u https://doi.org/10.1063/1.2737419 |x Verlag |x Resolving-System |3 Volltext |
| 856 | 4 | 0 | |u https://aip.scitation.org/doi/10.1063/1.2737419 |x Verlag |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20191211 | ||
| 993 | |a Article | ||
| 994 | |a 2007 | ||
| 998 | |g 1200360753 |a Kemerink, Martijn |m 1200360753:Kemerink, Martijn |p 4 | ||
| 999 | |a KXP-PPN1685169821 |e 3563718466 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"language":["eng"],"origin":[{"dateIssuedDisp":"08 May 2007","dateIssuedKey":"2007"}],"name":{"displayForm":["S.G.J. Mathijssen, M. Cölle and A.J.G. Mank, M. Kemerink and P.A. Bobbert, D.M. de Leeuw"]},"title":[{"title_sort":"Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress","title":"Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress"}],"id":{"eki":["1685169821"],"doi":["10.1063/1.2737419"]},"person":[{"given":"Simon G. J.","display":"Mathijssen, Simon G. J.","family":"Mathijssen","roleDisplay":"VerfasserIn","role":"aut"},{"given":"Michael","roleDisplay":"VerfasserIn","role":"aut","display":"Cölle, Michael","family":"Cölle"},{"role":"aut","roleDisplay":"VerfasserIn","family":"Mank","display":"Mank, A. J. G.","given":"A. J. G."},{"given":"Martijn","roleDisplay":"VerfasserIn","role":"aut","family":"Kemerink","display":"Kemerink, Martijn"},{"given":"Peter A.","family":"Bobbert","display":"Bobbert, Peter A.","roleDisplay":"VerfasserIn","role":"aut"},{"given":"Dago M. de","roleDisplay":"VerfasserIn","role":"aut","display":"Leeuw, Dago M. de","family":"Leeuw"}],"relHost":[{"physDesc":[{"extent":"Online-Ressource"}],"origin":[{"publisherPlace":"Melville, NY","publisher":"American Inst. of Physics","dateIssuedKey":"1962","dateIssuedDisp":"1962-"}],"titleAlt":[{"title":"Applied physics letters online"}],"type":{"bibl":"periodical","media":"Online-Ressource"},"pubHistory":["1.1962 -"],"part":{"pages":"192104","volume":"90","text":"90(2007), 19, Seite 192104","issue":"19","year":"2007"},"disp":"Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stressApplied physics letters","title":[{"title_sort":"Applied physics letters","title":"Applied physics letters"}],"language":["eng"],"name":{"displayForm":["publ. by the American Institute of Physics"]},"note":["Gesehen am 17.10.13"],"corporate":[{"display":"American Institute of Physics","role":"isb","roleDisplay":"Herausgebendes Organ"}],"id":{"eki":["267324952"],"zdb":["1469436-0"],"issn":["1077-3118"]},"recId":"267324952"}],"recId":"1685169821","type":{"media":"Online-Ressource","bibl":"article-journal"},"note":["Gesehen am 11.12.2019"]} | ||
| SRT | |a MATHIJSSENSCANNINGKE0820 | ||