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Photoluminescence enhancement in thin films of PbSe nanocrystals

Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2Si/SiO2<math display="inline" overflow="sc...

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Main Authors: Christova, Christina G. (Author) , Stouwdam, J. W. (Author) , Eijkemans, T. J. (Author) , Silov, A. Yu. (Author) , van der Heijden, R. W. (Author) , Kemerink, Martijn (Author) , Janssen, René A. J. (Author) , Salemink, Huub W. (Author)
Format: Article (Journal)
Language:English
Published: 23 September 2008
In: Applied physics letters
Year: 2008, Volume: 93, Issue: 12
ISSN:1077-3118
DOI:10.1063/1.2989131
Online Access:Verlag, Volltext: https://doi.org/10.1063/1.2989131
Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.2989131
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Author Notes:C.G. Christova, J.W. Stouwdam, T.J. Eijkemans, A. Yu. Silov, R.W. van der Heijden, M. Kemerink, R.A.J. Janssen, and H.W.M. Salemink
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Summary:Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2Si/SiO2<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mrow><mtext>Si</mtext><mo>/</mo><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation intensity, being higher for a weaker irradiation power. The possible mechanisms behind the phenomenon of the PLE are discussed and it is suggested to originate mainly from charge trapping outside the NCs core.
Item Description:Gesehen am 11.12.2019
Physical Description:Online Resource
ISSN:1077-3118
DOI:10.1063/1.2989131

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