Photoluminescence enhancement in thin films of PbSe nanocrystals
Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2Si/SiO2<math display="inline" overflow="sc...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
23 September 2008
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| In: |
Applied physics letters
Year: 2008, Jahrgang: 93, Heft: 12 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2989131 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.2989131 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.2989131 
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| Verfasserangaben: | C.G. Christova, J.W. Stouwdam, T.J. Eijkemans, A. Yu. Silov, R.W. van der Heijden, M. Kemerink, R.A.J. Janssen, and H.W.M. Salemink |
| Zusammenfassung: | Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2Si/SiO2<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mrow><mtext>Si</mtext><mo>/</mo><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation intensity, being higher for a weaker irradiation power. The possible mechanisms behind the phenomenon of the PLE are discussed and it is suggested to originate mainly from charge trapping outside the NCs core. |
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| Beschreibung: | Gesehen am 11.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2989131 |