Proton migration mechanism for the instability of organic field-effect transistors
During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p<math display="inline" overflow="scroll" altim...
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| Hauptverfasser: | , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
22 December 2009
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| In: |
Applied physics letters
Year: 2009, Jahrgang: 95, Heft: 25 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.3275807 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.3275807 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.3275807 
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| Verfasserangaben: | A. Sharma, S.G.J. Mathijssen, M. Kemerink, D.M. de Leeuw, and P.A. Bobbert |
| Zusammenfassung: | During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mi>p</mi></math>-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors. |
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| Beschreibung: | Gesehen am 12.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.3275807 |