Monolayer dual gate transistors with a single charge transport layer
A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
07 April 2010
|
| In: |
Applied physics letters
Year: 2010, Volume: 96, Issue: 14 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.3379026 |
| Online Access: | Verlag, Volltext: https://doi.org/10.1063/1.3379026 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.3379026 
|
| Author Notes: | M. Spijkman, S.G.J. Mathijssen, E.C.P. Smits, M. Kemerink, P.W.M. Blom, D.M. de Leeuw |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1685397514 | ||
| 003 | DE-627 | ||
| 005 | 20220817182722.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 191212s2010 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1063/1.3379026 |2 doi | |
| 035 | |a (DE-627)1685397514 | ||
| 035 | |a (DE-599)KXP1685397514 | ||
| 035 | |a (OCoLC)1341280796 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 29 |2 sdnb | ||
| 100 | 1 | |a Spijkman, Mark-Jan |e VerfasserIn |0 (DE-588)1201513863 |0 (DE-627)1685398049 |4 aut | |
| 245 | 1 | 0 | |a Monolayer dual gate transistors with a single charge transport layer |c M. Spijkman, S.G.J. Mathijssen, E.C.P. Smits, M. Kemerink, P.W.M. Blom, D.M. de Leeuw |
| 264 | 1 | |c 07 April 2010 | |
| 300 | |a 3 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 12.12.2019 | ||
| 520 | |a A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the semiconductor thickness are negated. We investigate the electrical transport in a dual gate self-assembled monolayer field-effect transistor and present a detailed analysis of the importance of the contact geometry in monolayer field-effect transistors. | ||
| 700 | 1 | |a Mathijssen, Simon G. J. |e VerfasserIn |0 (DE-588)1201452686 |0 (DE-627)1685170706 |4 aut | |
| 700 | 1 | |a Smits, E. C. P. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Kemerink, Martijn |e VerfasserIn |0 (DE-588)1200360753 |0 (DE-627)1683330668 |4 aut | |
| 700 | 1 | |a Blom, P. W. M. |d 1965- |e VerfasserIn |0 (DE-588)1089336403 |0 (DE-627)853120358 |0 (DE-576)459704818 |4 aut | |
| 700 | 1 | |a Leeuw, Dago M. de |e VerfasserIn |0 (DE-588)1201143225 |0 (DE-627)1684442486 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Applied physics letters |d Melville, NY : American Inst. of Physics, 1962 |g 96(2010,14) Artikel-Nummer 143304, 3 Seiten |h Online-Ressource |w (DE-627)267324952 |w (DE-600)1469436-0 |w (DE-576)077052501 |x 1077-3118 |7 nnas |a Monolayer dual gate transistors with a single charge transport layer |
| 773 | 1 | 8 | |g volume:96 |g year:2010 |g number:14 |g extent:3 |a Monolayer dual gate transistors with a single charge transport layer |
| 856 | 4 | 0 | |u https://doi.org/10.1063/1.3379026 |x Verlag |x Resolving-System |3 Volltext |
| 856 | 4 | 0 | |u https://aip.scitation.org/doi/10.1063/1.3379026 |x Verlag |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20191212 | ||
| 993 | |a Article | ||
| 994 | |a 2010 | ||
| 998 | |g 1200360753 |a Kemerink, Martijn |m 1200360753:Kemerink, Martijn |p 4 | ||
| 999 | |a KXP-PPN1685397514 |e 3564108483 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"physDesc":[{"extent":"3 S."}],"recId":"1685397514","note":["Gesehen am 12.12.2019"],"type":{"media":"Online-Ressource","bibl":"article-journal"},"language":["eng"],"title":[{"title_sort":"Monolayer dual gate transistors with a single charge transport layer","title":"Monolayer dual gate transistors with a single charge transport layer"}],"person":[{"family":"Spijkman","given":"Mark-Jan","role":"aut","display":"Spijkman, Mark-Jan"},{"family":"Mathijssen","role":"aut","given":"Simon G. J.","display":"Mathijssen, Simon G. J."},{"role":"aut","given":"E. C. P.","family":"Smits","display":"Smits, E. C. P."},{"display":"Kemerink, Martijn","family":"Kemerink","role":"aut","given":"Martijn"},{"role":"aut","given":"P. W. M.","family":"Blom","display":"Blom, P. W. M."},{"family":"Leeuw","given":"Dago M. de","role":"aut","display":"Leeuw, Dago M. de"}],"relHost":[{"name":{"displayForm":["publ. by the American Institute of Physics"]},"pubHistory":["1.1962 -"],"titleAlt":[{"title":"Applied physics letters online"}],"corporate":[{"display":"American Institute of Physics","role":"isb"}],"id":{"issn":["1077-3118"],"eki":["267324952"],"zdb":["1469436-0"]},"part":{"issue":"14","extent":"3","text":"96(2010,14) Artikel-Nummer 143304, 3 Seiten","volume":"96","year":"2010"},"origin":[{"publisher":"American Inst. of Physics","dateIssuedKey":"1962","publisherPlace":"Melville, NY","dateIssuedDisp":"1962-"}],"title":[{"title":"Applied physics letters","title_sort":"Applied physics letters"}],"language":["eng"],"type":{"bibl":"periodical","media":"Online-Ressource"},"note":["Gesehen am 17.10.13"],"recId":"267324952","physDesc":[{"extent":"Online-Ressource"}],"disp":"Monolayer dual gate transistors with a single charge transport layerApplied physics letters"}],"origin":[{"dateIssuedKey":"2010","dateIssuedDisp":"07 April 2010"}],"id":{"eki":["1685397514"],"doi":["10.1063/1.3379026"]},"name":{"displayForm":["M. Spijkman, S.G.J. Mathijssen, E.C.P. Smits, M. Kemerink, P.W.M. Blom, D.M. de Leeuw"]}} | ||
| SRT | |a SPIJKMANMAMONOLAYERD0720 | ||