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Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate die...

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Bibliographic Details
Main Authors: Mathijssen, Simon G. J. (Author) , Spijkman, Mark-Jan (Author) , Andringa, Anne-Marije (Author) , Hal, Paul A. van (Author) , McCulloch, Iain (Author) , Kemerink, Martijn (Author) , Janssen, René A. J. (Author) , Leeuw, Dago M. de (Author)
Format: Article (Journal)
Language:English
Published: 21 September 2010
In: Advanced materials
Year: 2010, Volume: 22, Issue: 45, Pages: 5105-5109
ISSN:1521-4095
DOI:10.1002/adma.201001865
Online Access:Verlag, Volltext: https://doi.org/10.1002/adma.201001865
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201001865
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Author Notes:by Simon G.J. Mathijssen, Mark-Jan Spijkman, Anne-Marije Andringa, Paul A. van Hal, Iain McCulloch, Martijn Kemerink, René A.J. Janssen, and Dago M. de Leeuw
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Summary:The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.
Item Description:Gesehen am 12.12.2019
Physical Description:Online Resource
ISSN:1521-4095
DOI:10.1002/adma.201001865

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