Charge trapping at the dielectric of organic transistors visualized in real time and space
Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrod...
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| Hauptverfasser: | , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
12 February 2008
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| In: |
Advanced materials
Year: 2008, Jahrgang: 20, Heft: 5, Pages: 975-979 |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.200702688 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1002/adma.200702688 Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200702688 
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| Verfasserangaben: | by Simon G.J. Mathijssen, Martijn Kemerink, Abhinav Sharma, Michael Cölle, Peter A. Bobbert, René A.J. Janssen, and Dago M. de Leeuw |
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| 520 | |a Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture). | ||
| 650 | 4 | |a Atomic force microscopy | |
| 650 | 4 | |a Charge trapping | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Organic electronics | |
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