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Charge trapping at the dielectric of organic transistors visualized in real time and space

Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrod...

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Bibliographic Details
Main Authors: Mathijssen, Simon G. J. (Author) , Kemerink, Martijn (Author) , Sharma, Abhinav (Author) , Cölle, Michael (Author) , Bobbert, Peter A. (Author) , Janssen, René A. J. (Author) , Leeuw, Dago M. de (Author)
Format: Article (Journal)
Language:English
Published: 12 February 2008
In: Advanced materials
Year: 2008, Volume: 20, Issue: 5, Pages: 975-979
ISSN:1521-4095
DOI:10.1002/adma.200702688
Online Access:Verlag, Volltext: https://doi.org/10.1002/adma.200702688
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200702688
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Author Notes:by Simon G.J. Mathijssen, Martijn Kemerink, Abhinav Sharma, Michael Cölle, Peter A. Bobbert, René A.J. Janssen, and Dago M. de Leeuw
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Summary:Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
Item Description:Gesehen am 12.12.2019
Physical Description:Online Resource
ISSN:1521-4095
DOI:10.1002/adma.200702688

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