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Charge trapping at the dielectric of organic transistors visualized in real time and space

Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrod...

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Hauptverfasser: Mathijssen, Simon G. J. (VerfasserIn) , Kemerink, Martijn (VerfasserIn) , Sharma, Abhinav (VerfasserIn) , Cölle, Michael (VerfasserIn) , Bobbert, Peter A. (VerfasserIn) , Janssen, René A. J. (VerfasserIn) , Leeuw, Dago M. de (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 12 February 2008
In: Advanced materials
Year: 2008, Jahrgang: 20, Heft: 5, Pages: 975-979
ISSN:1521-4095
DOI:10.1002/adma.200702688
Online-Zugang:Verlag, Volltext: https://doi.org/10.1002/adma.200702688
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200702688
Volltext
Verfasserangaben:by Simon G.J. Mathijssen, Martijn Kemerink, Abhinav Sharma, Michael Cölle, Peter A. Bobbert, René A.J. Janssen, and Dago M. de Leeuw
Beschreibung
Zusammenfassung:Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric - visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
Beschreibung:Gesehen am 12.12.2019
Beschreibung:Online Resource
ISSN:1521-4095
DOI:10.1002/adma.200702688

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