Organic ferroelectric opto-electronic memories
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this ar...
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| Hauptverfasser: | , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
27 December 2011
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| In: |
Materials today
Year: 2011, Jahrgang: 14, Heft: 12, Pages: 592-599 |
| ISSN: | 1873-4103 |
| DOI: | 10.1016/S1369-7021(11)70300-5 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1016/S1369-7021(11)70300-5 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S1369702111703005 
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| Verfasserangaben: | Kamal Asadi, Mengyuan Li, Paul W.M. Blom, Martijn Kemerink, and Dago M. de Leeuw |
| Zusammenfassung: | Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto-electronic device concept, i.e., bistable rectifying diodes. The integration of these diodes into larger memory arrays is discussed. Through a clever design of the electrodes we demonstrate light emitting diodes with integrated built-in switches that can be applied in signage applications. |
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| Beschreibung: | Gesehen am 17.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1873-4103 |
| DOI: | 10.1016/S1369-7021(11)70300-5 |