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Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors

The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly a...

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Bibliographic Details
Main Authors: Gholamrezaie, Fatemeh (Author) , Andringa, Anne-Marije (Author) , Roelofs, W. S. Christian (Author) , Neuhold, Alfred (Author) , Kemerink, Martijn (Author) , Blom, P. W. M. (Author) , Leeuw, Dago M. de (Author)
Format: Article (Journal)
Language:English
Published: 2012
In: Small
Year: 2011, Volume: 8, Issue: 2, Pages: 241-245
ISSN:1613-6829
DOI:10.1002/smll.201101467
Online Access:Verlag, Volltext: https://doi.org/10.1002/smll.201101467
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201101467
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Author Notes:Fatemeh Gholamrezaie, Anne-Marije Andringa, W.S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W.M. Blom, and Dago M. de Leeuw
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Summary:The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
Item Description:First published: 25 November 2011
Gesehen am 17.12.2019
Physical Description:Online Resource
ISSN:1613-6829
DOI:10.1002/smll.201101467

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