Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly a...
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| Hauptverfasser: | , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2012
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| In: |
Small
Year: 2011, Jahrgang: 8, Heft: 2, Pages: 241-245 |
| ISSN: | 1613-6829 |
| DOI: | 10.1002/smll.201101467 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1002/smll.201101467 Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201101467 
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| Verfasserangaben: | Fatemeh Gholamrezaie, Anne-Marije Andringa, W.S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W.M. Blom, and Dago M. de Leeuw |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1685769888 | ||
| 003 | DE-627 | ||
| 005 | 20220817191525.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 191217r20122011xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1002/smll.201101467 |2 doi | |
| 035 | |a (DE-627)1685769888 | ||
| 035 | |a (DE-599)KXP1685769888 | ||
| 035 | |a (OCoLC)1341282294 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 30 |2 sdnb | ||
| 100 | 1 | |a Gholamrezaie, Fatemeh |e VerfasserIn |0 (DE-588)1201682274 |0 (DE-627)1685769985 |4 aut | |
| 245 | 1 | 0 | |a Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors |c Fatemeh Gholamrezaie, Anne-Marije Andringa, W.S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W.M. Blom, and Dago M. de Leeuw |
| 264 | 1 | |c 2012 | |
| 300 | |a 5 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a First published: 25 November 2011 | ||
| 500 | |a Gesehen am 17.12.2019 | ||
| 520 | |a The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM. | ||
| 534 | |c 2011 | ||
| 650 | 4 | |a organic field-effect transistors | |
| 650 | 4 | |a organosilanes | |
| 650 | 4 | |a scanning Kelvin-probe microscopy | |
| 650 | 4 | |a self-assembly | |
| 650 | 4 | |a threshold voltage | |
| 700 | 1 | |a Andringa, Anne-Marije |e VerfasserIn |0 (DE-588)1201517532 |0 (DE-627)1685406130 |4 aut | |
| 700 | 1 | |a Roelofs, W. S. Christian |e VerfasserIn |0 (DE-588)1201050677 |0 (DE-627)1684191297 |4 aut | |
| 700 | 1 | |a Neuhold, Alfred |e VerfasserIn |4 aut | |
| 700 | 1 | |a Kemerink, Martijn |e VerfasserIn |0 (DE-588)1200360753 |0 (DE-627)1683330668 |4 aut | |
| 700 | 1 | |a Blom, P. W. M. |d 1965- |e VerfasserIn |0 (DE-588)1089336403 |0 (DE-627)853120358 |0 (DE-576)459704818 |4 aut | |
| 700 | 1 | |a Leeuw, Dago M. de |e VerfasserIn |0 (DE-588)1201143225 |0 (DE-627)1684442486 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Small |d Weinheim : Wiley-VCH, 2005 |g 8(2012), 2, Seite 241-245 |h Online-Ressource |w (DE-627)473203529 |w (DE-600)2168935-0 |w (DE-576)114818878 |x 1613-6829 |7 nnas |a Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors |
| 773 | 1 | 8 | |g volume:8 |g year:2012 |g number:2 |g pages:241-245 |g extent:5 |a Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors |
| 856 | 4 | 0 | |u https://doi.org/10.1002/smll.201101467 |x Verlag |x Resolving-System |3 Volltext |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201101467 |x Verlag |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20191217 | ||
| 993 | |a Article | ||
| 994 | |a 2012 | ||
| 998 | |g 1200360753 |a Kemerink, Martijn |m 1200360753:Kemerink, Martijn |p 5 | ||
| 999 | |a KXP-PPN1685769888 |e 3566187313 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"person":[{"display":"Gholamrezaie, Fatemeh","family":"Gholamrezaie","role":"aut","given":"Fatemeh"},{"family":"Andringa","display":"Andringa, Anne-Marije","role":"aut","given":"Anne-Marije"},{"role":"aut","family":"Roelofs","display":"Roelofs, W. S. Christian","given":"W. S. Christian"},{"display":"Neuhold, Alfred","family":"Neuhold","role":"aut","given":"Alfred"},{"given":"Martijn","role":"aut","display":"Kemerink, Martijn","family":"Kemerink"},{"given":"P. W. M.","role":"aut","display":"Blom, P. W. M.","family":"Blom"},{"given":"Dago M. de","family":"Leeuw","display":"Leeuw, Dago M. de","role":"aut"}],"type":{"bibl":"article-journal","media":"Online-Ressource"},"relHost":[{"disp":"Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistorsSmall","part":{"text":"8(2012), 2, Seite 241-245","year":"2012","extent":"5","issue":"2","pages":"241-245","volume":"8"},"pubHistory":["1.2005 -"],"type":{"bibl":"periodical","media":"Online-Ressource"},"recId":"473203529","note":["Gesehen am 3. Dezember 2020","Fortsetzung der Druckausgabe"],"title":[{"subtitle":"nano micro","title":"Small","title_sort":"Small"}],"physDesc":[{"extent":"Online-Ressource"}],"language":["eng"],"id":{"doi":["10.1002/(ISSN)1613-6829"],"issn":["1613-6829"],"zdb":["2168935-0"],"eki":["473203529"]},"origin":[{"publisher":"Wiley-VCH","publisherPlace":"Weinheim","dateIssuedDisp":"[2005]-"}]}],"origin":[{"dateIssuedKey":"2012","dateIssuedDisp":"2012"}],"id":{"eki":["1685769888"],"doi":["10.1002/smll.201101467"]},"recId":"1685769888","title":[{"title":"Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors","title_sort":"Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors"}],"physDesc":[{"extent":"5 S."}],"language":["eng"],"note":["First published: 25 November 2011","Gesehen am 17.12.2019"],"name":{"displayForm":["Fatemeh Gholamrezaie, Anne-Marije Andringa, W.S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W.M. Blom, and Dago M. de Leeuw"]}} | ||
| SRT | |a GHOLAMREZACHARGETRAP2012 | ||