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Impact of Bi3+ heterovalent doping in organic-inorganic metal halide perovskite crystals

Intrinsic organic-inorganic metal halide perovskites (OIHP) based semiconductors have shown wide applications in optoelectronic devices. There have been several attempts to incorporate heterovalent metal (e.g., Bi3+) ions in the perovskites in an attempt to induce electronic doping and increase the...

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Bibliographic Details
Main Authors: Nayak, Pabitra K. (Author) , Sendner, Michael (Author) , Lovrinčić, Robert (Author) , Pucci, Annemarie (Author)
Format: Article (Journal)
Language:English
Published: 2018
In: Journal of the American Chemical Society
Year: 2017, Volume: 140, Issue: 2, Pages: 574-577
ISSN:1520-5126
DOI:10.1021/jacs.7b11125
Online Access:Verlag, Volltext: https://doi.org/10.1021/jacs.7b11125
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Author Notes:Pabitra K. Nayak, Michael Sendner, Bernard Wenger, Zhiping Wang, Kshama Sharma, Alexandra J. Ramadan, Robert Lovrinčić, Annemarie Pucci, P.K. Madhu, and Henry J. Snaith
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Summary:Intrinsic organic-inorganic metal halide perovskites (OIHP) based semiconductors have shown wide applications in optoelectronic devices. There have been several attempts to incorporate heterovalent metal (e.g., Bi3+) ions in the perovskites in an attempt to induce electronic doping and increase the charge carrier density in the semiconductor. It has been reported that inclusion of Bi3+ decreases the band gap of the material considerably. However, contrary to the earlier conclusions, despite a clear change in the appearance of the crystal as observed by eye, here we show that the band gap of MAPbBr3 crystals does not change due the presence of Bi3+ in the growth solution. An increased density of states in the band gap and use of very thick samples for transmission measurements, erroneously give the impression of a band gap shift. These sub band gap states also act as nonradiative recombination centers in the crystals.
Item Description:Gesehen am 22.01.2020
Published: December 21, 2017
Im Titel ist "3+" hochgestellt
Physical Description:Online Resource
ISSN:1520-5126
DOI:10.1021/jacs.7b11125

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