Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Milotti, Valeria (VerfasserIn) , Pietsch, Manuel (VerfasserIn) , Strunk, Karl-Philipp (VerfasserIn) , Melzer, Christian (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 4 January 2018
In: Review of scientific instruments
Year: 2018, Jahrgang: 89, Heft: 1
ISSN:1089-7623
DOI:10.1063/1.5002629
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1063/1.5002629
Verlag, lizenzpflichtig, Volltext: https://aip.scitation.org/doi/10.1063/1.5002629
Volltext
Verfasserangaben:Valeria Milotti, Manuel Pietsch, Karl-Philipp Strunk, and Christian Melzer
Beschreibung
Zusammenfassung:We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.
Beschreibung:Gesehen am 20.04.2020
Beschreibung:Online Resource
ISSN:1089-7623
DOI:10.1063/1.5002629