Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe
We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one...
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| Main Authors: | , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
4 January 2018
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| In: |
Review of scientific instruments
Year: 2018, Volume: 89, Issue: 1 |
| ISSN: | 1089-7623 |
| DOI: | 10.1063/1.5002629 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1063/1.5002629 Verlag, lizenzpflichtig, Volltext: https://aip.scitation.org/doi/10.1063/1.5002629 
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| Author Notes: | Valeria Milotti, Manuel Pietsch, Karl-Philipp Strunk, and Christian Melzer |
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| 520 | |a We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials. | ||
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