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Self-assembled monolayer dielectrics for low-voltage carbon nanotube transistors with controlled network density

Control of the density and uniformity of semiconducting single-walled carbon nanotube (SWNT) networks is crucial for their application in field-effect transistors (FETs) and critically depends on the surface of the substrate. Here, the concept of self-assembled monolayer (SAM) dielectrics on aluminu...

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Bibliographic Details
Main Authors: Schießl, Stefan Patrick (Author) , Gannott, Florentina (Author) , Etschel, Sebastian H. (Author) , Schweiger, Kai Manuel (Author) , Grünler, Saeideh (Author) , Halik, Marcus (Author) , Zaumseil, Jana (Author)
Format: Article (Journal)
Language:English
Published: July 20, 2016
In: Advanced materials interfaces
Year: 2016, Volume: 3, Issue: 18
ISSN:2196-7350
DOI:10.1002/admi.201600215
Online Access:Resolving-System, lizenzpflichtig, Volltext: https://doi.org/10.1002/admi.201600215
Verlag, lizenzpflichtig, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.201600215
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Author Notes:Stefan P. Schießl, Florentina Gannott, Sebastian H. Etschel, Manuel Schweiger, Saeideh Grünler, Marcus Halik, and Jana Zaumseil
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Summary:Control of the density and uniformity of semiconducting single-walled carbon nanotube (SWNT) networks is crucial for their application in field-effect transistors (FETs) and critically depends on the surface of the substrate. Here, the concept of self-assembled monolayer (SAM) dielectrics on aluminum/aluminum oxide bottom-gate electrodes is used to create low-voltage (<2 V) FETs with SWNT networks.
Item Description:Gesehen am 14.05.2020
Physical Description:Online Resource
ISSN:2196-7350
DOI:10.1002/admi.201600215

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