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Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a pol...

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Hauptverfasser: Schießl, Stefan Patrick (VerfasserIn) , Fröhlich, Nils Gerrit (VerfasserIn) , Held, Martin (VerfasserIn) , Gannott, Florentina (VerfasserIn) , Schweiger, Kai Manuel (VerfasserIn) , Forster, Michael (VerfasserIn) , Scherf, Ullrich (VerfasserIn) , Zaumseil, Jana (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 2015
In: ACS applied materials & interfaces
Year: 2014, Jahrgang: 7, Heft: 1, Pages: 682-689
ISSN:1944-8252
DOI:10.1021/am506971b
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/am506971b
Volltext
Verfasserangaben:Stefan P. Schießl, Nils Fröhlich, Martin Held, Florentina Gannott, Manuel Schweiger, Michael Forster, Ullrich Scherf, and Jana Zaumseil
Beschreibung
Zusammenfassung:Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V-1·s-1, low ohmic contact resistance, steep subthreshold swings (0.12-0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61.
Beschreibung:Published December 10, 2014
Gesehen am 24.06.2020
Beschreibung:Online Resource
ISSN:1944-8252
DOI:10.1021/am506971b

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