Multiple Coulomb scattering in thin silicon

We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 μm) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the Geant4 software package. We find good agreement between data and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Berger, Niklaus (VerfasserIn) , Förster, Fabian (VerfasserIn) , Kiehn, Moritz (VerfasserIn) , Philipp, Raphael (VerfasserIn) , Schöning, André (VerfasserIn) , Wiedner, Dirk (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 4 July 2014
In: Journal of Instrumentation
Year: 2014, Jahrgang: 9, Heft: 07, Pages: ?
ISSN:1748-0221
DOI:10.1088/1748-0221/9/07/P07007
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1088/1748-0221/9/07/P07007
Volltext
Verfasserangaben:N. Berger, A. Buniatyan, P. Eckert, F. Förster, R. Gredig, O. Kovalenko, M. Kiehn, R. Philipp, A. Schöning and D. Wiedner
Beschreibung
Zusammenfassung:We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 μm) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the Geant4 software package. We find good agreement between data and simulation in the scattering distribution width but large deviations in the shape of the distribution. In order to achieve a better description of the shape, a new scattering model based on a Student's t distribution is developed and compared to the data.
Beschreibung:Gesehen am 11.08.2020
Beschreibung:Online Resource
ISSN:1748-0221
DOI:10.1088/1748-0221/9/07/P07007