Buchumschlag

Polar rectification effect in electro-fatigued SrTiO3-based junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vac...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Xu, Xueli (VerfasserIn) , Zhang, Hui (VerfasserIn) , Zhong, Zhicheng (VerfasserIn) , Zhang, Ranran (VerfasserIn) , Yin, Lihua (VerfasserIn) , Sun, Yuping (VerfasserIn) , Huang, Haoliang (VerfasserIn) , Lu, Yalin (VerfasserIn) , Lu, Yi (VerfasserIn) , Zhou, Chun (VerfasserIn) , Ma, Zongwei (VerfasserIn) , Shen, Lei (VerfasserIn) , Wang, Junsong (VerfasserIn) , Guo, Jiandong (VerfasserIn) , Sun, Jirong (VerfasserIn) , Sheng, Zhigao (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: June 18, 2020
In: ACS applied materials & interfaces
Year: 2020, Jahrgang: 12, Heft: 28, Pages: 31645-31651
ISSN:1944-8252
DOI:10.1021/acsami.0c08418
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acsami.0c08418
Volltext
Verfasserangaben:Xueli Xu, Hui Zhang, Zhicheng Zhong, Ranran Zhang, Lihua Yin, Yuping Sun, Haoliang Huang, Yalin Lu, Yi Lu, Chun Zhou, Zongwei Ma, Lei Shen, Junsong Wang, Jiandong Guo, Jirong Sun, and Zhigao Sheng
Beschreibung
Zusammenfassung:Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.
Beschreibung:Gesehen am 02.09.2020
Beschreibung:Online Resource
ISSN:1944-8252
DOI:10.1021/acsami.0c08418

Ähnliche Einträge