Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy
In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge-carr...
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| Main Authors: | , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
22 October 2014
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| In: |
Advanced materials
Year: 2014, Volume: 26, Issue: 47, Pages: 7986-7992 |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201403655 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1002/adma.201403655 Verlag, lizenzpflichtig, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201403655 
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| Author Notes: | Stefan B. Grimm, Florian Jakubka, Stefan P. Schießl, Florentina Gannott, and Jana Zaumseil |
| Summary: | In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors. |
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| Item Description: | Gesehen am 20.10.2020 |
| Physical Description: | Online Resource |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201403655 |