Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy
In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge-carr...
Gespeichert in:
| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
22 October 2014
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| In: |
Advanced materials
Year: 2014, Jahrgang: 26, Heft: 47, Pages: 7986-7992 |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201403655 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1002/adma.201403655 Verlag, lizenzpflichtig, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201403655 
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| Verfasserangaben: | Stefan B. Grimm, Florian Jakubka, Stefan P. Schießl, Florentina Gannott, and Jana Zaumseil |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 173601305X | ||
| 003 | DE-627 | ||
| 005 | 20220818232340.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201020s2014 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1002/adma.201403655 |2 doi | |
| 035 | |a (DE-627)173601305X | ||
| 035 | |a (DE-599)KXP173601305X | ||
| 035 | |a (OCoLC)1341372754 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 29 |2 sdnb | ||
| 100 | 1 | |a Grimm, Stefan |e VerfasserIn |0 (DE-588)1156749964 |0 (DE-627)1019681977 |0 (DE-576)502412372 |4 aut | |
| 245 | 1 | 0 | |a Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy |c Stefan B. Grimm, Florian Jakubka, Stefan P. Schießl, Florentina Gannott, and Jana Zaumseil |
| 264 | 1 | |c 22 October 2014 | |
| 300 | |a 7 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 20.10.2020 | ||
| 520 | |a In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors. | ||
| 650 | 4 | |a ambipolar | |
| 650 | 4 | |a carbon nanotubes | |
| 650 | 4 | |a electrolyte-gating | |
| 650 | 4 | |a mapping | |
| 650 | 4 | |a Raman microscopy | |
| 700 | 1 | |a Zaumseil, Jana |e VerfasserIn |0 (DE-588)1137235659 |0 (DE-627)894232657 |0 (DE-576)491184247 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Advanced materials |d Weinheim : Wiley-VCH, 1989 |g 26(2014), 47, Seite 7986-7992 |h Online-Ressource |w (DE-627)269533958 |w (DE-600)1474949-X |w (DE-576)077884531 |x 1521-4095 |7 nnas |a Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy |
| 773 | 1 | 8 | |g volume:26 |g year:2014 |g number:47 |g pages:7986-7992 |g extent:7 |a Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy |
| 856 | 4 | 0 | |u https://doi.org/10.1002/adma.201403655 |x Verlag |x Resolving-System |z lizenzpflichtig |3 Volltext |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201403655 |x Verlag |z lizenzpflichtig |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20201020 | ||
| 993 | |a Article | ||
| 994 | |a 2014 | ||
| 998 | |g 1137235659 |a Zaumseil, Jana |m 1137235659:Zaumseil, Jana |d 120000 |d 120300 |e 120000PZ1137235659 |e 120300PZ1137235659 |k 0/120000/ |k 1/120000/120300/ |p 5 |y j | ||
| 999 | |a KXP-PPN173601305X |e 3782976509 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"language":["eng"],"recId":"173601305X","note":["Gesehen am 20.10.2020"],"origin":[{"dateIssuedDisp":"22 October 2014","dateIssuedKey":"2014"}],"name":{"displayForm":["Stefan B. Grimm, Florian Jakubka, Stefan P. Schießl, Florentina Gannott, and Jana Zaumseil"]},"person":[{"role":"aut","given":"Stefan","family":"Grimm","display":"Grimm, Stefan"},{"family":"Zaumseil","display":"Zaumseil, Jana","role":"aut","given":"Jana"}],"id":{"doi":["10.1002/adma.201403655"],"eki":["173601305X"]},"relHost":[{"pubHistory":["1.1989 -"],"physDesc":[{"extent":"Online-Ressource"}],"title":[{"title_sort":"Advanced materials","title":"Advanced materials"}],"type":{"media":"Online-Ressource","bibl":"periodical"},"id":{"zdb":["1474949-X"],"issn":["1521-4095"],"doi":["10.1002/(ISSN)1521-4095"],"eki":["269533958"]},"origin":[{"publisherPlace":"Weinheim","publisher":"Wiley-VCH","dateIssuedDisp":"1989-","dateIssuedKey":"1989"}],"language":["eng"],"part":{"pages":"7986-7992","issue":"47","extent":"7","text":"26(2014), 47, Seite 7986-7992","volume":"26","year":"2014"},"note":["Gesehen am 10.10.05"],"recId":"269533958","disp":"Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopyAdvanced materials"}],"title":[{"title":"Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy","title_sort":"Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy"}],"physDesc":[{"extent":"7 S."}],"type":{"media":"Online-Ressource","bibl":"article-journal"}} | ||
| SRT | |a GRIMMSTEFAMAPPINGCHA2220 | ||