Evaporation and condensation of SiO and SiO2 studied by infrared spectroscopy

Physical evaporation of SiO and SiO2 under ultra-high vacuum conditions was monitored in situ with infrared spectroscopy at frequencies between 450 cm−1 and 5000 cm−1. The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO2 evaporation, and can be descri...

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Bibliographic Details
Main Authors: Klevenz, Markus (Author) , Wetzel, Steffen (Author) , Möller, Michael (Author) , Pucci, Annemarie (Author)
Format: Article (Journal)
Language:English
Published: March 1, 2010
In: Applied spectroscopy
Year: 2010, Volume: 64, Issue: 3, Pages: 298-303
ISSN:1943-3530
DOI:10.1366/000370210790918346
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1366/000370210790918346
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Author Notes:M. Klevenz, S. Wetzel, M. Möller, and A. Pucci
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Summary:Physical evaporation of SiO and SiO2 under ultra-high vacuum conditions was monitored in situ with infrared spectroscopy at frequencies between 450 cm−1 and 5000 cm−1. The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO2 evaporation, and can be described with four Brendel oscillators located at 380 cm−1, 713 cm−1, 982 cm−1, and 1101 cm−1, corresponding to typical vibration modes in SiO.
Item Description:Im Titel ist "2" bei SiO2 tiefgestellt
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Physical Description:Online Resource
ISSN:1943-3530
DOI:10.1366/000370210790918346