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High-voltage CMOS active pixel sensor

The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, em...

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Main Authors: Peric, Ivan (Author) , Andreazza, Attilio (Author) , Augustin, Heiko (Author) , Barbero, Marlon (Author) , Benoit, Mathieu (Author) , Casanova, Raimon (Author) , Ehrler, Felix (Author) , Iacobucci, Giuseppe (Author) , Leys, Richard (Author) , Meneses González, Annie (Author) , Pangaud, Patrick (Author) , Prathapan, Mridula (Author) , Schimassek, Rudolf (Author) , Schöning, André (Author) , Figueras, Eva Vilella (Author) , Weber, Alena (Author) , Weber, Michele (Author) , Wong, Winnie (Author) , Zhang, Hui (Author)
Format: Article (Journal)
Language:English
Published: March 9, 2021
In: IEEE journal of solid state circuits
Year: 2021, Volume: 56, Issue: 8, Pages: 2488-2502
DOI:10.1109/JSSC.2021.3061760
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1109/JSSC.2021.3061760
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Author Notes:Ivan Perić, Attilio Andreazza, Heiko Augustin, Marlon Barbero, Mathieu Benoit, Raimon Casanova, Felix Ehrler, Giuseppe Iacobucci, Richard Leys, Annie Meneses Gonzalez, Patrick Pangaud, Mridula Prathapan, Rudolf Schimassek, André Schöning, Eva Vilella Figueras, Alena Weber, Michele Weber, Winnie Wong, and Hui Zhang
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Summary:The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 $\mu \textm$ can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.
Item Description:Gesehen am 13.10.2021
Physical Description:Online Resource
DOI:10.1109/JSSC.2021.3061760

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