Exotic magnetic and electronic properties of layered CrI3 single crystals under high pressure
Through advanced experimental techniques on CrI3 single crystals, we derive a pressure-temperature phase diagram. We find that Tc increases to ∼66 K with pressure up to ∼3 GPa followed by a decrease to ∼10 K at 21.2 GPa. The experimental results are reproduced by theoretical calculations based on de...
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article (Journal) Editorial |
| Language: | English |
| Published: |
8 February 2022
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| In: |
Physical review
Year: 2022, Volume: 105, Issue: 8, Pages: 1-6 |
| ISSN: | 2469-9969 |
| DOI: | 10.1103/PhysRevB.105.L081104 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1103/PhysRevB.105.L081104 Verlag, lizenzpflichtig, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.105.L081104 |
| Author Notes: | Anirudha Ghosh, D. Singh, T. Aramaki, Qingge Mu, V. Borisov, Y. Kvashnin, G. Haider, M. Jonak, D. Chareev, S.A. Medvedev, R. Klingeler, M. Mito, E.H. Abdul-Hafidh, J. Vejpravova, M. Kalbàč, R. Ahuja, Olle Eriksson, and Mahmoud Abdel-Hafiez |
| Summary: | Through advanced experimental techniques on CrI3 single crystals, we derive a pressure-temperature phase diagram. We find that Tc increases to ∼66 K with pressure up to ∼3 GPa followed by a decrease to ∼10 K at 21.2 GPa. The experimental results are reproduced by theoretical calculations based on density functional theory where electron-electron interactions are treated by a static on-site Hubbard U on Cr 3d orbitals. The origin of the pressure-induced reduction of the ordering temperature is associated with a decrease in the calculated bond angle, from 95∘ at ambient pressure to ∼85∘ at 25 GPa. Above 22 GPa, experiment and theory jointly point to the idea that the ferromagnetically ordered state is destroyed, giving rise first to a complex, unknown magnetic configuration, and at sufficiently high pressures a pure antiferromagnetic configuration. This sequence of transitions in the magnetism is accompanied by a well-detected pressure-induced semiconductor-to-metal phase transition that is revealed by both high-pressure resistivity measurements and ab initio theory. |
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| Item Description: | Gesehen am 22.03.2022 |
| Physical Description: | Online Resource |
| ISSN: | 2469-9969 |
| DOI: | 10.1103/PhysRevB.105.L081104 |