Enhancement of photodetector responsivity in standard SOI CMOS processes by introducing resonant grating structures
A new photodetector concept is described which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H.Brenner, "Aspects for calcul...
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| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2011
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| In: |
Journal of the European Optical Society. Rapid publications
Year: 2011, Jahrgang: 6, Pages: 1-5 |
| ISSN: | 1990-2573 |
| DOI: | 10.2971/jeos.2011.11014s |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.2971/jeos.2011.11014s Verlag, lizenzpflichtig, Volltext: https://www.jeos.org/index.php/jeos_rp/article/view/11014s 
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| Verfasserangaben: | M. Auer, K.-H. Brenner |
| Zusammenfassung: | A new photodetector concept is described which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H.Brenner, "Aspects for calculating local absorption with the rigorous coupled-wave method" Optic Express 2010, accepted). The simulations show that optimized lateral grating structures are able to enhance the absorption efficiency of thin semi-conductor detectors by a factor of 32 compared to nonenhanced approaches. |
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| Beschreibung: | Gesehen am 24.03.2022 |
| Beschreibung: | Online Resource |
| ISSN: | 1990-2573 |
| DOI: | 10.2971/jeos.2011.11014s |