Single-electron transistors studied by microwave and far-infrared absorption: theoretical results and experimental proposal

We present theoretical results on microwave and far-infrared (FIR) absorption of single-electron transistors obtained within exact numerical diagonalization for finite clusters. They show that both the microwave and the FIR spectra consist of two maxima, whose origin can be understood physically. Ou...

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Bibliographic Details
Main Authors: Bâldea, Ioan (Author) , Köppel, Horst (Author)
Format: Article (Journal)
Language:English
Published: 16 March 2010
In: Physical review. B, Condensed matter and materials physics
Year: 2010, Volume: 81, Pages: 1-22
ISSN:1550-235X
DOI:10.1103/PhysRevB.81.125322
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1103/PhysRevB.81.125322
Verlag, lizenzpflichtig, Volltext: https://ui.adsabs.harvard.edu/abs/2010PhRvB..81l5322B
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Author Notes:Ioan Bâldea and Horst Köppel
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Summary:We present theoretical results on microwave and far-infrared (FIR) absorption of single-electron transistors obtained within exact numerical diagonalization for finite clusters. They show that both the microwave and the FIR spectra consist of two maxima, whose origin can be understood physically. Our results on microwave absorption provide a physically intuitive qualitative interpretation of the Kondo splitting observed by Kogan [Science 304, 1293 (2004)]. The present results on the FIR absorption supplement and provide a physical insight into previous results obtained by means of the numerical renormalization group. Based on our theoretical results, we propose to conduct FIR experiments to determine the charging energy and other relevant parameters.
Item Description:Gesehen am 28.11.2022
Physical Description:Online Resource
ISSN:1550-235X
DOI:10.1103/PhysRevB.81.125322